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UTC UT134F/G
TRIACS
DESCRIPTION
Glass passivated triacs in a plastic envelope, intended for use in applications requiring highbidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
TRIAC
1
SYMBOL
MT2
TO-126
G
1:MT1 2:MT2 3:GATE
MT1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak off-state voltages UT134F/G-5 UT134F/G-6 UT134F/G-8
www..com
SYMBOL
VDRM
RATINGS
500 600* 800 4
UNIT
V
RMS on-state current full sine wave; Tmb 107 C Non-repetitive peak on-state current (Full sine wave; Tj = 25 C prior to surge) t = 20ms t = 16.7 ms I2t for fusing t = 10 ms Repetitive rate of rise of on-state current after triggering ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/s T2+ G+ T2+ GT2- GT2- G+ Peak gate voltage Peak gate current Peak gate power Average gate power (over any 20 ms period) Storage temperature Operating junction temperature
IT(RMS)
A
ITSM
I2t
25 27 3.1
A A2s
dIT /dt
50 50 50 10 5 2 5 0.5 -40 ~ 150 125
A/s
VGM IGM PGM PG(AV) Tstg Tj
V A W W
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R401-008,B
UTC UT134F/G
TRIAC
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/s.
THERMAL RESISTANCES
PARAMETER
Thermal resistance Junction to mounting base Full cycle Half cycle Thermal resistance Junction to ambient (In free air)
SYMBOL
Rth j-mb Rth j-a
MIN
TYP
MAX
3.0 3.7
UNIT
K/W K/W K/W
100
STATIC CHARACTERISTICS (Tj=25C, unless otherwise stated)
PARAMETER
Gate trigger current IGT
SYMBOL
CONDITIONS
VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400V ; IT = 0.1 A; Tj =125C VD = VDRM(max) ; Tj = 125 C
MIN
TYP
MAX
UT134F UT134G
UNIT
5 8 11 30 7 16 5 7 5 1.4 0.7 0.4 0.1
25 25 25 70 20 30 20 30 15 1.7 1.5
50 50 50 100 30 45 30 45 30
mA
Latching current IL
mA
Holding current On-state voltage Gate trigger voltage
IH VT VGT
0.25
mA V V V mA
Off-state leakage current
ID
0.5
DYNAMIC CHARACTERISTICS (Tj=25C, unless otherwise stated)
PARAMETER
Critical rate of rise of Off-state voltage Critical rate of change of Commutating voltage Gate controlled turn-on time
SYMBOL
dVD /dt
CONDITIONS
VDM = 67% VDRM(max) ; Tj =125C; exponential waveform; gate open circuit VDM=400V;Tj=95C;IT(RMS)=4A; dIcom /dt =1.8A/ms; gate open circuit ITM = 6 A; VD= VDRM(max) ; IG=0.1A; dIG/dt=5A/s
MIN UT134F UT134G 50 200
TYP
250
MAX
UNIT
V/s
dVcom/dt
10
50
V/s
tgt
2
s
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R401-008,B
UTC UT134F/G
TYPICAL CHARACTERISTICS
8 Ptot/W 7 6 5 4 3 2 1 0 0 1 Tmb(max)/C IT(RMS)/A
TRIAC
101
5 4 3 2 1
104 =180 107 120 110 90 60 113 30 116 119 122
107
125 5 2 3 4 IT(RMS)/A Fig.1. Maximum on-state dissipation,Ptot,versus rms on-state current,IT(RMS)where =conduction angle.
0 -50
0
50
100
150
Tmb/C Fig.4. Maximum permissible rms current lT(RMS), versus mounting base temperature Tmb IT(RMS)/A 12
ITSM/A 1000 IT T 100 ITSM
10 time 8 6 4 T2-G+ quadrant 10 10us 2 10ms 100ms 0 0.01 0.1 1 10
Tj initial=25max
dIT/dt limit
100us
1ms
T/s Fig.2.Maximum Permissible non-repetitive peak on-state Current ITSM,versus pulse width tp, for sinusoidal currents,tp20ms ITSM/A IT T ITSM time
surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current lT(RMS),versus surge duration,for sinusoidal currents,f=50HZ;Tmb107 VGT(Tj) VGT(25)
30 25 20 15 10 5
1.6 1.4
Tj initial=25max
1.2 1 0.8 0.6
0 0
0 0
10
100
1000
0.4 -50
50 50
100 100
150 150
Number of cycles at 50Hz Fig3.Maximum Permissible non-repetitive peak on-state current ITSM,versus number of cycles,for sinusoidal currents,f=50HZ.
Tj/ Fig.6. Normalised gate trigger voltage temperature Tj. VGT(Tj)/VGT(25),versus junction
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R401-008,B
UTC UT134F/G
IGT(Tj) IGT(25)
T2+G+ T2+GT2-GT2-G+
TRIAC
IT/A 12 10 8 6 4 2
Tj=125 Tj=25
3 2.5 2 1.5 1 0.5
max typ
Vo=1.27V Rs=0.091Ohms
0 -50
0
50 Tj/
100
150
0
0
0.5
1
1.5 VT/V
2
2.5
3
Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25),versus junction temperature Tj. IL(Tj) IL(25)
Fig.10.Typical and maximum on-state characteristic.
3 2.5 2 1.5 1 0.5
10
Zth j-mb(K/W ) unidirectional bidirectional
1
0.1
PD
tp t
0 -50
0
50 Tj/
100
150
0.01 10us
0.1ms
1ms
10ms tp/s
0.1s
1s
10s
Fig.8.Normalised latching Current IL(Tj)/IL(25), versus junction temperature Tj IH(Tj) 3 IH(25) 2.5 2 1.5 1 0.5 0 -50 0 50 Tj/ Fig. 9.Normalised holding current IH(Tj)/IH(25), versus junction temperature Tj. 100 150 1 10 100 1000
Fig.11.Transient thermal impedance Zthj-mb,versus pulse width tp. dVcom/dt(V/us)
off-state dV/dt limit UT134G
UT134F
dlcom /dt=5.1 A/ms
3.9
3
2.3
1.8
1.4
0
150 100 Tj/C Fig.12.Typical commutation dV/dt versus junction temperature,parameter commutation dlT/dt.The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dlT/dt
50
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R401-008,B
UTC UT134F/G
TRIAC
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R401-008,B

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